C. Capasso

A high performance 1.8 V, 0.20 μm CMOS technology with copper metallization

S. Venkatesan, A. V. Gelatos, S. Hisra et al. · 2002 · 101 citations

High Performance 0.20, Engineering, Vlsi Design +19

Challenges for the integration of metal gate electrodes

J. Schaeffer, C. Capasso, L. R. C. Fonseca et al. · 2005 · 71 citations

Materials Science, Electrical Engineering, Metal Gate Electrodes +14

Microstructural characterization of inlaid copper interconnect lines

Paul R. Besser, Ehrenfried Zschech, Werner Blum et al. · Journal of Electronic Materials · 2001 · 70 citations

Materials Science, Electromigration Technique, Engineering +6

Adsorption of Counterions to a Stearate Monolayer Spread at the Water-Air Interface: A Synchrotron X-Ray Study

J.M. Bloch, W. Yun, Xiao‐Sheng Yang et al. · Physical Review Letters · 1988 · 69 citations

Engineering, Synchrotron X-ray Study, Chemistry +16

Statistical analysis of early failures in electromigration

M. Gall, C. Capasso, D. Jawarani et al. · Journal of Applied Physics · 2001 · 63 citations

Engineering, Integrated Circuits, Interconnect (Integrated Circuits) +17