U. Kwon

High performance 14nm SOI FinFET CMOS technology with 0.0174µm<sup>2</sup> embedded DRAM and 15 levels of Cu metallization

C-H. Lin, B. Greene, J. Cai et al. · 2014 · 128 citations

A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

Siddarth Krishnan, U. Kwon, N. Moumen et al. · 2011 · 81 citations

Sige Channels, Low Power Applications, Engineering +16

A 7nm CMOS technology platform for mobile and high performance compute application

B. Jagannathan, Akihisa Ogino, D. Jaeger et al. · 2017 · 58 citations

Engineering, Vlsi Design, Computer Architecture +17

Ru/Ru-oxide interlayers for CoCrPtO perpendicular recording media

U. Kwon, Robert Sinclair, E. Vélu et al. · IEEE Transactions on Magnetics · 2005 · 36 citations

Magnetic Properties, Engineering, Chemistry +16

Role of point defects and HfO2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal–oxide–semiconductor devices

R. K. Pandey, Rajesh Sathiyanarayanan, U. Kwon et al. · Journal of Applied Physics · 2013 · 27 citations

Oxide Heterostructures, Materials Science, Electrical Engineering +14