Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology

B. Jagannathan, Mahmoud Khater, F. Pagette, +18

IEEE Electron Device Letters

Ghz F/sub Max/EngineeringSemiconductor DeviceSige Npn HbtsRf Semiconductor +15

SiGe HBTs with cut-off frequency of 350 GHz

Jae-Sung Rieh, B. Jagannathan, H. Chen, +18

Electrical EngineeringCut-off FrequencyEngineeringRf SemiconductorPhysics +11

Record RF performance of 45-nm SOI CMOS Technology

Sungjae Lee, B. Jagannathan, Shreesh Narasimha, +10

Electrical EngineeringEngineeringVlsi DesignRf SemiconductorHigh-frequency Device +10

A 0.18 μm BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect

Alvin Joseph, D. Coolbaugh, M. Zierak, +25

EngineeringVlsi DesignGe RampBase DiffusionIntegrated Circuits +16

High performance 14nm SOI FinFET CMOS technology with 0.0174µm<sup>2</sup> embedded DRAM and 15 levels of Cu metallization

C-H. Lin, B. Greene, J. Cai, +95

22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL

P. Chang, C. Ortolland, David Fried, +51

High-performance Soi TechnologyEngineeringVlsi DesignComputer ArchitectureInterconnect (Integrated Circuits) +14

Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS

Alvin Joseph, D.L. Harame, B. Jagannathan, +8

Proceedings of the IEEE

EngineeringCommunication InterfaceSige Bicmos WlCommunication CircuitTransmission System +17

A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure

S.J. Jeng, B. Jagannathan, Jae-Sung Rieh, +10

IEEE Electron Device Letters

EngineeringNarrow Base WidthIntegrated CircuitsNon-self-aligned StructureSemiconductor Device +16

SiGe Heterojunction Bipolar Transistors and Circuits Toward Terahertz Communication Applications

Jae-Sung Rieh, B. Jagannathan, D. Greenberg, +8

IEEE Transactions on Microwave Theory and Techniques

Thz PhotonicsElectrical EngineeringTerahertz TechnologyEngineeringRf Semiconductor +13

40-Gb/s circuits built from a 120-GHz f/sub T/ SiGe technology

G. Freeman, Mounir Meghelli, Young Kwark, +10

IEEE Journal of Solid-State Circuits

40-Gb/s CircuitsElectrical EngineeringEngineeringVlsi DesignHigh-frequency Device +9