B. Jagannathan

Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology

B. Jagannathan, Mahmoud Khater, F. Pagette et al. · IEEE Electron Device Letters · 2002 · 262 citations

Engineering, Electrical Engineering, Microelectronics +15

SiGe HBTs with cut-off frequency of 350 GHz

Jae-Sung Rieh, B. Jagannathan, H. Chen et al. · 2003 · 201 citations

Engineering, Electrical Engineering, Materials Science +17

Record RF performance of 45-nm SOI CMOS Technology

Sungjae Lee, B. Jagannathan, Shreesh Narasimha et al. · 2007 · 179 citations

Engineering, Electrical Engineering, Microelectronics +16

High performance 14nm SOI FinFET CMOS technology with 0.0174µm ² embedded DRAM and 15 levels of Cu metallization

C-H. Lin, B. Greene, J. Cai et al. · 2014 · 129 citations

Engineering, Computer Engineering, Electrical Engineering +9

A 0.18 μm BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect

Alvin Joseph, D. Coolbaugh, M. Zierak et al. · 2002 · 129 citations

Engineering, Electrical Engineering, Microelectronics +16