B. Jagannathan

Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology

B. Jagannathan, Mahmoud Khater, F. Pagette et al. · IEEE Electron Device Letters · 2002 · 261 citations

Ghz F/sub Max/, Engineering, Semiconductor Device +17

SiGe HBTs with cut-off frequency of 350 GHz

Jae-Sung Rieh, B. Jagannathan, H. Chen et al. · 2003 · 201 citations

Electrical Engineering, Cut-off Frequency, Engineering +13

Record RF performance of 45-nm SOI CMOS Technology

Sungjae Lee, B. Jagannathan, Shreesh Narasimha et al. · 2007 · 179 citations

Electrical Engineering, Engineering, Vlsi Design +12

A 0.18 μm BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect

Alvin Joseph, D. Coolbaugh, M. Zierak et al. · 2002 · 129 citations

Engineering, Vlsi Design, Ge Ramp +18

High performance 14nm SOI FinFET CMOS technology with 0.0174µm<sup>2</sup> embedded DRAM and 15 levels of Cu metallization

C-H. Lin, B. Greene, J. Cai et al. · 2014 · 128 citations