H. Chen

SiGe HBTs with cut-off frequency of 350 GHz

Jae-Sung Rieh, B. Jagannathan, H. Chen et al. · 2003 · 201 citations

Electrical Engineering, Cut-off Frequency, Engineering +13

Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs

K. Rim, J. O. Chu, H. Chen et al. · 2003 · 143 citations

Electrical Engineering, Engineering, Strained Si Devices +11

Strained Si CMOS (SS CMOS) technology: opportunities and challenges

K. Rim, Robert E. Anderson, D. Boyd et al. · Solid-State Electronics · 2003 · 91 citations

Electrical Engineering, Engineering, Nanoelectronics +6

A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure

S.J. Jeng, B. Jagannathan, Jae-Sung Rieh et al. · IEEE Electron Device Letters · 2001 · 88 citations

Engineering, Narrow Base Width, Integrated Circuits +18

Hadron mass predictions of the valence approximation to lattice QCD

F. Butler, H. Chen, James Sexton et al. · Physical Review Letters · 1993 · 86 citations · Full text