H. Chen

SiGe HBTs with cut-off frequency of 350 GHz

Jae-Sung Rieh, B. Jagannathan, H. Chen et al. · 2003 · 201 citations

Engineering, Electrical Engineering, Materials Science +17

Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs

K. Rim, J. O. Chu, H. Chen et al. · 2003 · 144 citations

Engineering, Electrical Engineering, Materials Science +15

Hadron mass predictions of the valence approximation to lattice QCD

F. Butler, H. Chen, James Sexton et al. · Physical Review Letters · 1993 · 96 citations · Full text

Natural Sciences, Physics, Nuclear Physics +14

Strained Si CMOS (SS CMOS) technology: opportunities and challenges

K. Rim, Robert E. Anderson, D. Boyd et al. · Solid-State Electronics · 2003 · 91 citations

Engineering, Computer Engineering, Electrical Engineering +14

A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure

S.J. Jeng, B. Jagannathan, Jae-Sung Rieh et al. · IEEE Electron Device Letters · 2001 · 88 citations

Engineering, Electrical Engineering, Materials Science +17