IEEE Electron Device Letters · 2001 · 88 citations · 6 references
EngineeringNarrow Base WidthIntegrated CircuitsNon-self-aligned StructureSemiconductor DeviceSemiconductorsElectronic DevicesRf SemiconductorNanoelectronicsElectronic EngineeringComputational ElectromagneticsNsa StructureElectrical EngineeringPhysicsHigh-frequency DeviceAntennaMillimeter Wave TechnologyMicroelectronicsMicrowave EngineeringLow-complexity EmitterApplied Physics
A record 210-GHz f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> SiGe heterojunction bipolar transistor at a collector current density of 6-9 mA/μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> is fabricated with a new nonself-aligned (NSA) structure based on 0.18 μm technology. This NSA structure has a low-complexity emitter and extrinsic base process which reduces overall thermal cycle and minimizes transient enhanced diffusion. A low-power performance has been achieved which requires only 1 mA collector current to reach 200-GHz f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> . The performance is a result of narrow base width and reduced parasitics in the device. Detailed comparison is made to a 120-GHz self-aligned production device.
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Suppression of boron outdiffusion in SiGe HBTs by carbon incorporation
L. Lanzerotti, J. C. Sturm, E.A. Stach et al. · 2002 · 62 citations