D. Greenberg

Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology

B. Jagannathan, Mahmoud Khater, F. Pagette et al. · IEEE Electron Device Letters · 2002 · 261 citations

Ghz F/sub Max/, Engineering, Semiconductor Device +17

SiGe HBTs with cut-off frequency of 350 GHz

Jae-Sung Rieh, B. Jagannathan, H. Chen et al. · 2003 · 201 citations

Electrical Engineering, Cut-off Frequency, Engineering +13

Interconnects in the third dimension

Kerry Bernstein, Ruchir Puri, Paul Andry et al. · Proceedings - ACM IEEE Design Automation Conference · 2007 · 122 citations

Engineering, Vlsi Design, Computer Architecture +23

Foundation of rf CMOS and SiGe BiCMOS technologies

J. Dunn, D. Ahlgren, Douglas Coolbaugh et al. · IBM Journal of Research and Development · 2003 · 101 citations

Electrical Engineering, Ibm Sige Bicmos, Engineering +13

A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure

S.J. Jeng, B. Jagannathan, Jae-Sung Rieh et al. · IEEE Electron Device Letters · 2001 · 88 citations

Engineering, Narrow Base Width, Integrated Circuits +18