D. Ahlgren

Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology

B. Jagannathan, Mahmoud Khater, F. Pagette et al. · IEEE Electron Device Letters · 2002 · 262 citations

Engineering, Electrical Engineering, Microelectronics +15

SiGe HBTs with cut-off frequency of 350 GHz

Jae-Sung Rieh, B. Jagannathan, H. Chen et al. · 2003 · 201 citations

Engineering, Electrical Engineering, Materials Science +17

Current status and future trends of SiGe BiCMOS technology

D.L. Harame, D. Ahlgren, Douglas Coolbaugh et al. · IEEE Transactions on Electron Devices · 2001 · 168 citations

Engineering, Computer Engineering, Electrical Engineering +17

A 0.18 μm BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect

Alvin Joseph, D. Coolbaugh, M. Zierak et al. · 2002 · 129 citations

Engineering, Electrical Engineering, Microelectronics +16

Foundation of rf CMOS and SiGe BiCMOS technologies

J. Dunn, D. Ahlgren, Douglas Coolbaugh et al. · IBM Journal of Research and Development · 2003 · 101 citations

Engineering, Electrical Engineering, Microelectronics +16