D.L. Harame

75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

G.L. Patton, J.H. Comfort, B.S. Meyerson et al. · IEEE Electron Device Letters · 1990 · 480 citations

Engineering, Electrical Engineering, Materials Science +17

Heterojunction bipolar transistors using Si-Ge alloys

Subramanian S. Iyer, G.L. Patton, J.M.C. Stork et al. · IEEE Transactions on Electron Devices · 1989 · 397 citations

Engineering, Electrical Engineering, Materials Science +17

Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits

D.L. Harame, J.H. Comfort, John D. Cressler et al. · IEEE Transactions on Electron Devices · 1995 · 377 citations

Engineering, Electrical Engineering, Materials Science +17

A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design

Sorin P. Voinigescu, M.C. Maliepaard, J.L. Showell et al. · IEEE Journal of Solid-State Circuits · 1997 · 337 citations · Full text

Engineering, Electrical Engineering, Circuit Theory +16

22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications

R. Carter, J. Mazurier, Luca Pirro et al. · 2016 · 291 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +14