J.M.C. Stork

75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

G.L. Patton, J.H. Comfort, B.S. Meyerson et al. · IEEE Electron Device Letters · 1990 · 480 citations

Engineering, Electrical Engineering, Materials Science +17

Heterojunction bipolar transistors using Si-Ge alloys

Subramanian S. Iyer, G.L. Patton, J.M.C. Stork et al. · IEEE Transactions on Electron Devices · 1989 · 397 citations

Engineering, Electrical Engineering, Materials Science +17

The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs

Baolei Cheng, Min Cao, A. Inani et al. · IEEE Transactions on Electron Devices · 1999 · 299 citations

Engineering, Electrical Engineering, Materials Science +17

Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy

G.L. Patton, Subramanian S. Iyer, S.L. Delage et al. · IEEE Electron Device Letters · 1988 · 295 citations

Engineering, Electrical Engineering, Materials Science +17

SiGe-channel heterojunction p-MOSFET's

S. Verdonckt-Vandebroek, E.F. Crabbé, B.S. Meyerson et al. · IEEE Transactions on Electron Devices · 1994 · 245 citations

Engineering, Electrical Engineering, Materials Science +14