J.M.C. Stork - Concepedia

Author

J.M.C. Stork

IBM Research - Thomas J. Watson Research Center

Also Known As

J M C Stork, J. M. C. Stork, J. M.C. Stork, J. STORK, J. Stork, J.M. Stork, J.M.C. Stork, Johannes M. C. Stork, Johannes M.C. Stork, Stork, J. M.

Publications

3.9K

Citations

H-Index

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center IBM (United States)

About

J.M.C. Stork is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	32	55	3.7K
2	Electrical Engineering	31	54	3.6K
3	Applied Physics	29	51	3.5K
4	Computer Engineering	6	6	248
5	Natural Sciences	3	3	116

J.M.C. Stork

Publications

3.8K

Citations

H-Index

Page 1

	Year	Citations
75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors G.L. Patton, J.H. Comfort, B.S. Meyerson, IEEE Electron Device Letters Intrinsic Transit TimeElectrical EngineeringElectronic DevicesEmitter WidthHigh-speed Electronics	1990	480
Heterojunction bipolar transistors using Si-Ge alloys Subramanian S. Iyer, G.L. Patton, J.M.C. Stork, IEEE Transactions on Electron Devices Materials ScienceMaterials EngineeringElectrical EngineeringElectronic DevicesEngineering	1989	396
The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs Baolei Cheng, Min Cao, A. Inani, IEEE Transactions on Electron Devices EngineeringSemiconductor DeviceSub-100 Nm MosfetsMetal Gate ElectrodesNanoelectronics	1999	297
Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy G.L. Patton, Subramanian S. Iyer, S.L. Delage, IEEE Electron Device Letters SemiconductorsHomojunction TransistorsElectrical EngineeringElectronic DevicesEngineering	1988	295
SiGe-channel heterojunction p-MOSFET's S. Verdonckt-Vandebroek, E.F. Crabbé, B.S. Meyerson, IEEE Transactions on Electron Devices Device ModelingSemiconductor TechnologyElectrical EngineeringEngineeringNanoelectronics	1994	245
High-mobility modulation-doped SiGe-channel p-MOSFETs S. Verdonckt-Vandebroek, E.F. Crabbé, B.S. Meyerson, IEEE Electron Device Letters Low-power ElectronicsGraded Sige ChannelElectrical EngineeringSemiconductor TechnologyEngineering	1991	121
On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations John D. Cressler, J.H. Comfort, E.F. Crabbé, IEEE Transactions on Electron Devices EngineeringVlsi DesignSi BaseIntegrated CircuitsSilicon On Insulator	1993	108
Non-ideal base current in bipolar transistors at low temperatures J.C.S. Woo, J.D. Plummer, J.M.C. Stork IEEE Transactions on Electron Devices Device ModelingBipolar Device PhysicsElectrical EngineeringEngineeringPhysics	1987	89
Graded-SiGe-base, poly-emitter heterojunction bipolar transistors G.L. Patton, D.L. Harame, J.M.C. Stork, IEEE Electron Device Letters SemiconductorsLow BiasElectrical EngineeringElectronic DevicesEngineering	1989	88
Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistors E.F. Crabbé, B.S. Meyerson, J.M.C. Stork, Electrical EngineeringSige-base Bipolar TransistorsEngineeringRf SemiconductorSemiconductor Device	2002	84

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