B.S. Meyerson

Low-temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition

B.S. Meyerson · Applied Physics Letters · 1986 · 496 citations

75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

G.L. Patton, J.H. Comfort, B.S. Meyerson et al. · IEEE Electron Device Letters · 1990 · 480 citations

Intrinsic Transit Time, Electrical Engineering, Electronic Devices +10

Heterojunction bipolar transistors using Si-Ge alloys

Subramanian S. Iyer, G.L. Patton, J.M.C. Stork et al. · IEEE Transactions on Electron Devices · 1989 · 396 citations

Materials Science, Materials Engineering, Electrical Engineering +13

Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits

D.L. Harame, J.H. Comfort, John D. Cressler et al. · IEEE Transactions on Electron Devices · 1995 · 377 citations

Si/sige Epitaxial-base Transistors, Electrical Engineering, Wafer Scale Processing +12

Anomalous strain relaxation in SiGe thin films and superlattices

F. K. LeGoues, B.S. Meyerson, J. F. Morar · Physical Review Letters · 1991 · 362 citations

Materials Science, Epitaxial Growth, Engineering +12