F. K. LeGoues - Concepedia

Author

F. K. LeGoues

IBM Research - Thomas J. Watson Research Center

Also Known As

F K LeGoues, F. K LeGoues, F. K. LEGOUES, F. K. LeGoues, F. K. Legoues, F.K. LeGoues, F.K. Legoues, Francoise K. LeGoues, Francoise K. Legoues, Françoise K. LeGoues

144

Publications

10.4K

Citations

H-Index

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center IBM (United States)Carnegie Mellon University

About

F. K. LeGoues is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, materials science, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	49	88	7.9K
2	Applied Physics	48	81	7.5K
3	Chemistry	13	14	940
4	Chemical Engineering	6	6	1K
5	Natural Sciences	3	3	80

F. K. LeGoues

Publications

8.2K

Citations

H-Index

Page 1

	Year	Citations
Competing relaxation mechanisms in strained layers J. Tersoff, F. K. LeGoues Physical Review Letters Relaxation ProcessEngineeringSevere Plastic DeformationWork HardeningStrain Relaxes	1994	776
Anomalous strain relaxation in SiGe thin films and superlattices F. K. LeGoues, B.S. Meyerson, J. F. Morar Physical Review Letters Materials ScienceEpitaxial GrowthEngineeringSoft ModePhysics	1991	362
Cooperative growth phenomena in silicon/germanium low-temperature epitaxy B.S. Meyerson, Kevin J. Uram, F. K. LeGoues Applied Physics Letters Materials ScienceMaterials EngineeringChemical EngineeringDesorption CenterEngineering	1988	341
Growth and strain compensation effects in the ternary Si1−<i>x</i>−<i>y</i>Ge<i>x</i>C<i>y</i> alloy system K. Eberl, Subramanian S. Iyer, Stefan Zollner, Applied Physics Letters Materials ScienceMaterials EngineeringStrain CompensationEngineeringPseudomorphic Si1−ycy	1992	315
Oxidation studies of SiGe F. K. LeGoues, R. Rosenberg, Tùng Lâm Nguyễn, Journal of Applied Physics Materials ScienceMaterials EngineeringChemical EngineeringMolecular SieveEngineering	1989	312
Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices F. K. LeGoues, B.S. Meyerson, J. F. Morar, Journal of Applied Physics EngineeringSevere Plastic DeformationSemiconductor NanostructuresSemiconductorsAnomalous Strain Relaxation	1992	266
Defect self-annihilation in surfactant-mediated epitaxial growth M. Horn‐von Hoegen, F. K. LeGoues, M. Copel, Physical Review Letters Materials ScienceEpitaxial GrowthEngineeringPhysicsNanotechnology	1991	233
Cyclic Growth of Strain-Relaxed Islands F. K. LeGoues, M. C. Reuter, J. Tersoff, Physical Review Letters EngineeringMechanical EngineeringStrain-relaxed IslandsSilicon On InsulatorSeafloor Morphology	1994	220
Chemical bonding and reaction at metal/polymer interfaces P. S. Ho, Peter Hahn, Johann W. Bartha, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceMaterials EngineeringChemical EngineeringHigh Temperature PolymerEngineering	1985	213
Microstructure and strain relief of Ge films grown layer by layer on Si(001) F. K. LeGoues, M. Copel, R. M. Tromp Physical review. B, Condensed matter Materials ScienceMaterials EngineeringEngineeringDislocation InteractionPhysics	1990	208

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