Stefan Zollner

Growth and strain compensation effects in the ternary Si1−<i>x</i>−<i>y</i>Ge<i>x</i>C<i>y</i> alloy system

K. Eberl, Subramanian S. Iyer, Stefan Zollner et al. · Applied Physics Letters · 1992 · 315 citations

Materials Science, Materials Engineering, Strain Compensation +12

Ge–Sn semiconductors for band-gap and lattice engineering

Matthew R. Bauer, J. L. Taraci, J. Tolle et al. · Applied Physics Letters · 2002 · 266 citations · Full text

Semiconductors, Materials Science, Electrical Engineering +11

Vibrational properties of AlN grown on (111)-oriented silicon

T. Prokofyeva, M. Seon, J. Vanbuskirk et al. · Physical review. B, Condensed matter · 2001 · 258 citations

Materials Science, Aluminium Nitride, Engineering +10

Carrier concentration and lattice absorption in bulk and epitaxial silicon carbide determined using infrared ellipsometry

Thomas E. Tiwald, John A. Woollam, Stefan Zollner et al. · Physical review. B, Condensed matter · 1999 · 163 citations

Optical Materials, Engineering, Spectroscopic Property +22

Microscopic theory of intervalley scattering in GaAs: k dependence of deformation potentials and scattering rates

Stefan Zollner, Sudha Gopalan, M. Cardona · Journal of Applied Physics · 1990 · 130 citations

Engineering, Electron Diffraction, Electron Physic +16