M. Cardona - Concepedia

Author

M. Cardona

Max Planck Institute for Solid State Research ORCID

Also Known As

Cardona, M, Cardona, M., Cardona, Manuel, Kim Parker Howard, M Cardona, M. CARDONA, M. Cardona, MANUEL CARDONA, Manuel Cardona, Melissa Delgado Cardona

1.3K

Publications

77.8K

Citations

125

H-Index

202

Concepts

All Affiliations

Max Planck Institute for Solid State Research Max Planck Society Brown University

About

M. Cardona is an author at Max Planck Institute for Solid State Research specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	107	641	53.3K
2	Natural Sciences	73	277	22.5K
3	Education	1	1	10
4	Humanities	1	1	10
5	Management	1	1	25

M. Cardona

683

Publications

55.2K

Citations

108

H-Index

Page 1

	Year	Citations
Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering M. H. Brodsky, M. Cardona, J. J. Cuomo Physical review. B, Solid state EngineeringGlow DischargeChemistrySilicon On InsulatorDifferent Raman	1977	1.6K
<i>Fundamentals of Semiconductors: Physics and Materials Properties</i> Peter Y. Yu, M. Cardona, L. J. Sham Physics Today SemiconductorsQuantum ConfinementEngineeringElectronic MaterialsPhysics	1997	1K
Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type Semiconductors F. Cerdeira, C.J. Buchenauer, Fred H. Pollak, Physical review. B, Solid state Optical MaterialsEngineeringSpectroscopic PropertySemiconductorsIi-vi Semiconductor	1972	891
Piezo-Electroreflectance in Ge, GaAs, and Si Fred H. Pollak, M. Cardona Physical Review SemiconductorsShear Deformation PotentialsNonlinear Stress DependenceEngineeringElectroreflectance Peaks	1968	850
Resonant Raman scattering in ZnO J. M. Calleja, M. Cardona Physical review. B, Solid state Optical MaterialsEngineeringSpectroscopic PropertyBand EdgeOptical Properties	1977	845
Interband critical points of GaAs and their temperature dependence P. Lautenschlager, M. Garriga, S. Logothetidis, Physical review. B, Condensed matter EngineeringElectronic StructureSpectroscopic PropertySemiconductorsIi-vi Semiconductor	1987	841
The origin of visible luminescencefrom “porous silicon”: A new interpretation Martin S. Brandt, H. D. Fuchs, M. Stutzmann, Solid State Communications Materials ScienceOptical MaterialsEngineeringPhotoluminescenceNew Interpretation	1992	839
Electroreflectance at a Semiconductor-Electrolyte Interface M. Cardona, K. L. Shaklee, Fred H. Pollak Physical Review EngineeringSemiconductor-electrolyte InterfaceElectronic StructureSemiconductor NanostructuresSemiconductors	1967	778
Temperature dependence of the dielectric function of germanium L. Viña, S. Logothetidis, M. Cardona Physical review. B, Condensed matter DielectricsEngineeringTemperature DependenceElectronic StructureQuantum Materials	1984	773
Temperature dependence of the dielectric function and interband critical points in silicon P. Lautenschlager, M. Garriga, L. Viña, Physical review. B, Condensed matter EngineeringTemperature DependenceOptoelectronic DevicesExcitonic Line ShapeSilicon On Insulator	1987	768

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