J. Tolle

Ge–Sn semiconductors for band-gap and lattice engineering

Matthew R. Bauer, J. L. Taraci, J. Tolle et al. · Applied Physics Letters · 2002 · 266 citations · Full text

Semiconductors, Materials Science, Electrical Engineering +11

Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon

Jay Mathews, Richard T. Beeler, J. Tolle et al. · Applied Physics Letters · 2010 · 181 citations

Optical Materials, Engineering, Direct-gap Photoluminescence +22

Raman scattering in Ge1−ySny alloys

Vijay Richard D’Costa, J. Tolle, Radek Roucka et al. · Solid State Communications · 2007 · 125 citations

Spectroscopic Property, Applied Physics, Surface-enhanced Raman Scattering +1

Perfectly tetragonal, tensile-strained Ge on Ge1−ySny buffered Si(100)

Yanyan Fang, J. Tolle, Radek Roucka et al. · Applied Physics Letters · 2007 · 117 citations

Materials Science, Ge1−ysny Buffers, Engineering +12

Tunable Optical Gap at a Fixed Lattice Constant in Group-IV Semiconductor Alloys

Vijay Richard D’Costa, Yanyan Fang, J. Tolle et al. · Physical Review Letters · 2009 · 108 citations