Ge–Sn semiconductors for band-gap and lattice engineering

Matthew R. Bauer, J. L. Taraci, J. Tolle, +6

Applied Physics Letters

SemiconductorsMaterials ScienceElectrical EngineeringEngineeringApplied Physics +9

Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon

Jay Mathews, Richard T. Beeler, J. Tolle, +4

Applied Physics Letters

Optical MaterialsEngineeringDirect-gap PhotoluminescenceLaser ApplicationsOptoelectronic Devices +20

Raman scattering in Ge1−ySny alloys

Vijay Richard D’Costa, J. Tolle, Radek Roucka, +3

Solid State Communications

Spectroscopic PropertyApplied PhysicsSurface-enhanced Raman ScatteringGe1−ysny Alloys

Perfectly tetragonal, tensile-strained Ge on Ge1−ySny buffered Si(100)

Yanyan Fang, J. Tolle, Radek Roucka, +4

Applied Physics Letters

Materials ScienceGe1−ysny BuffersEngineeringCrystalline DefectsSurface Science +10

Tunable Optical Gap at a Fixed Lattice Constant in Group-IV Semiconductor Alloys

Vijay Richard D’Costa, Yanyan Fang, J. Tolle, +2

Physical Review Letters

Direct gap electroluminescence from Si/Ge1−ySny p-i-n heterostructure diodes

Radek Roucka, Jay Mathews, Richard T. Beeler, +3

Applied Physics Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringOptical MaterialsElectronic Devices +13

Low temperature chemical vapor deposition of Si-based compounds via SiH3SiH2SiH3: Metastable SiSn∕GeSn∕Si(100) heteroepitaxial structures

J. Tolle, A. V. G. Chizmeshya, Yunnan Fang, +5

Applied Physics Letters

Materials ScienceMaterials EngineeringReactive Sih2 GroupsEngineeringSurface Science +11

Optical and structural properties of SixSnyGe1−x−y alloys

P. Aella, C. Cook, J. Tolle, +3

Applied Physics Letters

Optical MaterialsEngineeringCrystal Growth TechnologySemiconductorsSingle-phase Sixsnyge1−x−y +14

Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors

Vijay Richard D’Costa, Yanyan Fang, J. Tolle, +2

Thin Solid Films

Materials ScienceSemiconductorsMaterials EngineeringTernary Gesisn AlloysEngineering +8

Versatile buffer layer architectures based on Ge1−xSnx alloys

Radek Roucka, J. Tolle, C. Cook, +6

Applied Physics Letters

EngineeringSilicon On InsulatorSemiconductorsNanoelectronicsCompound Semiconductor +14