Radek Roucka

Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications

Jay Mathews, Radek Roucka, Junqi Xie et al. · Applied Physics Letters · 2009 · 182 citations

Optical Materials, Engineering, Direct Band Gap +19

Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon

Jay Mathews, Richard T. Beeler, J. Tolle et al. · Applied Physics Letters · 2010 · 181 citations

Optical Materials, Engineering, Direct-gap Photoluminescence +22

Raman scattering in Ge1−ySny alloys

Vijay Richard D’Costa, J. Tolle, Radek Roucka et al. · Solid State Communications · 2007 · 125 citations

Spectroscopic Property, Applied Physics, Surface-enhanced Raman Scattering +1

Perfectly tetragonal, tensile-strained Ge on Ge1−ySny buffered Si(100)

Yanyan Fang, J. Tolle, Radek Roucka et al. · Applied Physics Letters · 2007 · 117 citations

Materials Science, Ge1−ysny Buffers, Engineering +12

Sn-alloying as a means of increasing the optical absorption of Ge at the<i>C</i>- and<i>L</i>-telecommunication bands

Vijay Richard D’Costa, Yanyan Fang, Jay Mathews et al. · Semiconductor Science and Technology · 2009 · 100 citations

Optical Materials, Engineering, Optical Absorption +17