T. Prokofyeva

Vibrational properties of AlN grown on (111)-oriented silicon

T. Prokofyeva, M. Seon, J. Vanbuskirk et al. · Physical review. B, Condensed matter · 2001 · 258 citations

Materials Science, Aluminium Nitride, Engineering +10

High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

S. A. Nikishin, N. N. Faleev, Vladimir G. Antipov et al. · Applied Physics Letters · 1999 · 200 citations

Materials Engineering, Semiconductors, Electrical Engineering +13

Raman studies of nitrogen incorporation in GaAs1−xNx

T. Prokofyeva, Toni Sauncy, M. Seon et al. · Applied Physics Letters · 1998 · 108 citations

Materials Science, Semiconductors, Engineering +9

The STAR experiment at the relativistic heavy ion collider

J. W. Harris, D. L. Adams, N. Added et al. · Nuclear Physics A · 1994 · 95 citations

Heavy Ion Physic, Collider Physic, Star Experiment +2

High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia

S. A. Nikishin, Vladimir G. Antipov, S. Francoeur et al. · Applied Physics Letters · 1999 · 71 citations

Materials Science, Materials Engineering, Aluminium Nitride +14