S. A. Nikishin

Vibrational properties of AlN grown on (111)-oriented silicon

T. Prokofyeva, M. Seon, J. Vanbuskirk et al. · Physical review. B, Condensed matter · 2001 · 258 citations

Materials Science, Aluminium Nitride, Engineering +10

High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

S. A. Nikishin, N. N. Faleev, Vladimir G. Antipov et al. · Applied Physics Letters · 1999 · 200 citations

Materials Engineering, Semiconductors, Electrical Engineering +13

Luminescence of as-grown and thermally annealed GaAsN/GaAs

S. Francoeur, Gandhi Sivaraman, Y. Qiu et al. · Applied Physics Letters · 1998 · 160 citations

Semiconductors, Nitrogen Concentration, Electrical Engineering +14

Raman studies of nitrogen incorporation in GaAs1−xNx

T. Prokofyeva, Toni Sauncy, M. Seon et al. · Applied Physics Letters · 1998 · 108 citations

Materials Science, Semiconductors, Engineering +9

High quality GaN–InGaN heterostructures grown on (111) silicon substrates

J. Yang, C. J. Sun, Q. Chen et al. · Applied Physics Letters · 1996 · 100 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +16