S. A. Nikishin

Vibrational properties of AlN grown on (111)-oriented silicon

T. Prokofyeva, M. Seon, J. Vanbuskirk et al. · Physical review. B, Condensed matter · 2001 · 260 citations

Natural Sciences, Materials Science, Physics +14

High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

S. A. Nikishin, N. N. Faleev, Vladimir G. Antipov et al. · Applied Physics Letters · 1999 · 201 citations

Engineering, Materials Engineering, Materials Science +14

Luminescence of as-grown and thermally annealed GaAsN/GaAs

S. Francoeur, Gandhi Sivaraman, Y. Qiu et al. · Applied Physics Letters · 1998 · 160 citations

Natural Sciences, Materials Engineering, Materials Science +17

Raman studies of nitrogen incorporation in GaAs1−xNx

T. Prokofyeva, Toni Sauncy, M. Seon et al. · Applied Physics Letters · 1998 · 108 citations

Natural Sciences, Materials Science, Physics +17

High quality GaN–InGaN heterostructures grown on (111) silicon substrates

J. Yang, C. J. Sun, Q. Chen et al. · Applied Physics Letters · 1996 · 101 citations

Engineering, Materials Engineering, Materials Science +17