High quality GaN–InGaN heterostructures grown on (111) silicon substrates

Abstract

We report on the low pressure metal organic chemical vapor deposition of single crystal, wurtzitic layers of GaN and GaN/InGaN heterostructures on (111) GaAs/Si composite substrates. The structural, optical, and electrical properties of the epitaxial layers are evaluated using x-ray diffraction, transmission electron microscopy, photoluminescence, and measurements of minority carrier diffusion length. These measurements demonstrate high quality of GaN grown on the composite substrate.