G. A. Seryogin

High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

S. A. Nikishin, N. N. Faleev, Vladimir G. Antipov et al. · Applied Physics Letters · 1999 · 200 citations

Materials Engineering, Semiconductors, Electrical Engineering +13

MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor

G. A. Seryogin, Fikadu Alema, Nicholas Valente et al. · Applied Physics Letters · 2020 · 136 citations

Materials Engineering, Materials Science, Oxide Heterostructures +15

High quality GaN–InGaN heterostructures grown on (111) silicon substrates

J. Yang, C. J. Sun, Q. Chen et al. · Applied Physics Letters · 1996 · 100 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +16

Multi-kV Class <i>β</i>-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²

Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy et al. · IEEE Electron Device Letters · 2021 · 83 citations · Full text

Catalytic hydride vapour phase epitaxy growth of GaN nanowires

G. A. Seryogin, Ilan Shalish, Warren J. MoberlyChan et al. · Nanotechnology · 2005 · 77 citations

Materials Science, Aluminium Nitride, Chemical Engineering +9