G. A. Seryogin

High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

S. A. Nikishin, N. N. Faleev, Vladimir G. Antipov et al. · Applied Physics Letters · 1999 · 201 citations

Engineering, Materials Engineering, Materials Science +14

MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor

G. A. Seryogin, Fikadu Alema, Nicholas A. Valente et al. · Applied Physics Letters · 2020 · 140 citations

Engineering, Materials Engineering, Materials Science +17

High quality GaN–InGaN heterostructures grown on (111) silicon substrates

J. Yang, C. J. Sun, Q. Chen et al. · Applied Physics Letters · 1996 · 101 citations

Engineering, Materials Engineering, Materials Science +17

Multi-kV Class <i>β</i>-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²

Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy et al. · IEEE Electron Device Letters · 2021 · 86 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Catalytic hydride vapour phase epitaxy growth of GaN nanowires

G. A. Seryogin, Ilan Shalish, Warren J. MoberlyChan et al. · Nanotechnology · 2005 · 77 citations

Natural Sciences, Materials Engineering, Materials Science +17