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110
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8.7K
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10
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Eden Prairie, United States
110
Fast growth rate of epitaxial β–Ga2O3 by close coupled showerhead MOCVD
Fikadu Alema, B. Hertog, A. Osinsky et al. · Journal of Crystal Growth · 2017 · 144 citations
Low 114 cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD
Fikadu Alema, Yuewei Zhang, A. Osinsky et al. · APL Materials · 2020 · 101 citations · Full text
Engineering, β-Ga2o3 Thin Films, Crystal Growth Technology +17
Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown <b>β</b>-Ga2O3
Fikadu Alema, Yuewei Zhang, A. Osinsky et al. · APL Materials · 2019 · 94 citations · Full text
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