Agnitron Technology (United States)

MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature

Yuewei Zhang, Fikadu Alema, Akhil Mauze et al. · APL Materials · 2018 · 251 citations · Full text

Wide-bandgap Semiconductor, Engineering, Electron Mobility +18

Fast growth rate of epitaxial β–Ga2O3 by close coupled showerhead MOCVD

Fikadu Alema, B. Hertog, A. Osinsky et al. · Journal of Crystal Growth · 2017 · 144 citations

Materials Science, Materials Engineering, Engineering +9

MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor

G. A. Seryogin, Fikadu Alema, Nicholas Valente et al. · Applied Physics Letters · 2020 · 136 citations

Materials Engineering, Materials Science, Oxide Heterostructures +15

Low 114  cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD

Fikadu Alema, Yuewei Zhang, A. Osinsky et al. · APL Materials · 2020 · 101 citations · Full text

Engineering, β-Ga2o3 Thin Films, Crystal Growth Technology +17

Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown <b>β</b>-Ga2O3

Fikadu Alema, Yuewei Zhang, A. Osinsky et al. · APL Materials · 2019 · 94 citations · Full text