A. Osinsky

Self-heating in high-power AlGaN-GaN HFETs

R. Gaška, A. Osinsky, J. Yang et al. · IEEE Electron Device Letters · 1998 · 298 citations

Engineering, Electrical Engineering, Materials Science +17

Schottky barrier detectors on GaN for visible–blind ultraviolet detection

Q. Chen, Jinhong Yang, A. Osinsky et al. · Applied Physics Letters · 1997 · 296 citations

Engineering, Materials Engineering, Materials Science +16

MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature

Yuewei Zhang, Fikadu Alema, Akhil Mauze et al. · APL Materials · 2018 · 262 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Low noise <i>p-</i>π<i>-n</i> GaN ultraviolet photodetectors

A. Osinsky, S. Gangopadhyay, R. Gaška et al. · Applied Physics Letters · 1997 · 230 citations

Engineering, Electrical Engineering, Materials Science +17

High-temperature performance of AlGaN/GaN HFETs on SiC substrates

R. Gaška, Q. Chen, Jinwei Yang et al. · IEEE Electron Device Letters · 1997 · 218 citations

Engineering, Electrical Engineering, Materials Science +17