Applied Physics Letters · 1997 · 230 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor DevicesDetector TechnologyNoise In Semiconductor DevicesPhotodetectorsPhotovoltaic DevicesSemiconductor DetectorsUltraviolet DetectorsDark CurrentNoise Equivalent PowerNoise FloorNoise Floor EstimationNoise In PhotodetectorsResponse TimeResponsivityUltraviolet Photodetectors
We report on the fabrication and characterization of p-π-n GaN ultraviolet detectors. The peak responsivity at ∼363 nm is measured to be 0.1 A/W in the photovoltaic mode, and 0.14 A/W with a bias of −15 V. Speed measurements have shown the photoresponse to be RC-limited with the response time decreasing from 17.4 ns at zero bias to 10.3 ns at −6 V bias. For a 200×200 μ m2 device, we measure the dark current to be 2.7 pA at −3 V bias, and a noise density of less than 10−25 A2/Hz, the noise floor of the measurement. Extrapolating the noise data taken at higher reverse biases, we estimate the noise equivalent power to be 6.6×10−15 W/Hz1/2.
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Very low resistance multilayer Ohmic contact to <i>n</i>-GaN
Zhifang Fan, S. Noor Mohammad, Wook Kim et al. · Applied Physics Letters · 1996 · 455 citations
Schottky barrier detectors on GaN for visible–blind ultraviolet detection
Q. Chen, Jinhong Yang, A. Osinsky et al. · Applied Physics Letters · 1997 · 296 citations