R. Gaška

AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

Max Shatalov, Wenhong Sun, A. V. Lunev et al. · Applied Physics Express · 2012 · 465 citations · Full text

Photonics, Electrical Engineering, Solid-state Lighting +14

Nonresonant detection of terahertz radiation in field effect transistors

W. Knap, V. Yu. Kachorovskii, Yanqing Deng et al. · Journal of Applied Physics · 2002 · 386 citations

Semiconductors, Electron Density, Electrical Engineering +13

AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor

M.A. Khan, X. Hu, G. Sumin et al. · IEEE Electron Device Letters · 2000 · 382 citations

Oxide Heterostructures, Wide-bandgap Semiconductor, Electrical Engineering +9

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

M. Asif Khan, X. Hu, Ahmad Tarakji et al. · Applied Physics Letters · 2000 · 355 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +7

Deep-Ultraviolet Light-Emitting Diodes

M. S. Shur, R. Gaška · IEEE Transactions on Electron Devices · 2009 · 303 citations

Ultraviolet Light, Engineering, Compact Solid-state Deep-ultraviolet +20