X. Hu

AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

Max Shatalov, Wenhong Sun, A. V. Lunev et al. · Applied Physics Express · 2012 · 469 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Nonresonant detection of terahertz radiation in field effect transistors

W. Knap, V. Yu. Kachorovskii, Yanqing Deng et al. · Journal of Applied Physics · 2002 · 390 citations

Engineering, Electrical Engineering, Materials Science +17

AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor

M.A. Khan, X. Hu, G. Sumin et al. · IEEE Electron Device Letters · 2000 · 383 citations

Engineering, Electrical Engineering, Microelectronics +16

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

M. Asif Khan, X. Hu, Ahmad Tarakji et al. · Applied Physics Letters · 2000 · 355 citations

Engineering, Electrical Engineering, Materials Science +17

Si 3 N 4 / AlGaN/GaN –metal–insulator–semiconductor heterostructure field–effect transistors

X. Hu, A. Koudymov, G. Simin et al. · Applied Physics Letters · 2001 · 252 citations

Engineering, Electrical Engineering, Materials Engineering +17