G. Simin - Concepedia

Author

G. Simin

University of South Carolina ORCID

Also Known As

G S Simin, G Simin, G. S. SIMIN, G. S. Simin, G. SIMIN, G. Simin, G.. Simin, G.S. Simin, GRIGORY SIMIN, Geng Simin

307

Publications

9.4K

Citations

H-Index

Concepts

All Affiliations

University of South Carolina Sensor Electronic Technology (United States)Rensselaer Polytechnic Institute Ioffe Institute

About

G. Simin is an author at University of South Carolina specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	52	133	8.5K
2	Applied Physics	51	127	8.3K
3	Natural Sciences	5	5	162
4	Chemistry	3	3	80
5	Chemical Engineering	1	1	27

G. Simin

146

Publications

Citations

H-Index

Page 1

	Year	Citations
An assessment of wide bandgap semiconductors for power devices J.L. Hudgins, G. Simin, Enrico Santi, IEEE Transactions on Power Electronics Wide-bandgap SemiconductorEngineeringPower ElectronicsNanoelectronicsWide-bandgap Semiconductors	2003	575
Nonresonant detection of terahertz radiation in field effect transistors W. Knap, V. Yu. Kachorovskii, Yanqing Deng, Journal of Applied Physics SemiconductorsElectron DensityElectrical EngineeringWide-bandgap SemiconductorTerahertz Spectroscopy	2002	386
AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates M. Asif Khan, X. Hu, Ahmad Tarakji, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringMicrowave PerformanceApplied Physics	2000	355
Carrier mobility model for GaN T. T. Mnatsakanov, M. E. Levinshteĭn, L. I. Pomortseva, Solid-State Electronics Electrical EngineeringEngineeringApplied PhysicsGan Power DeviceCarrier Mobility Model	2003	258
Si 3 N 4 / AlGaN/GaN –metal–insulator–semiconductor heterostructure field–effect transistors X. Hu, A. Koudymov, G. Simin, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2001	251
AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz V. Kumar, Wu Lu, R. Schwindt, IEEE Electron Device Letters Gan-based HemtsWide-bandgap SemiconductorElectrical EngineeringEngineeringF/sub T/	2002	225
Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management Jianping Zhang, H. M. Wang, Mikhail Gaevski, Applied Physics Letters Materials EngineeringMaterials ScienceWide-bandgap SemiconductorAluminium NitrideEngineering	2002	198
Enhancement mode AlGaN/GaN HFET with selectivelygrown <i>pn</i> junction gate X. Hu, G. Simin, J. Yang, Electronics Letters	2000	187
The 1.6-kV AlGaN/GaN HFETs N. Tipirneni, A. Koudymov, V. Adivarahan, IEEE Electron Device Letters Electrical EngineeringEngineeringHigh Voltage EngineeringApplied PhysicsAluminum Gallium Nitride	2006	170
Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm Jianping Zhang, A. Chitnis, V. Adivarahan, Applied Physics Letters Wide-bandgap SemiconductorPhotonicsElectrical EngineeringSolid-state LightingEngineering	2002	169

Page 1