A. Koudymov

Si 3 N 4 / AlGaN/GaN –metal–insulator–semiconductor heterostructure field–effect transistors

X. Hu, A. Koudymov, G. Simin et al. · Applied Physics Letters · 2001 · 252 citations

Engineering, Electrical Engineering, Materials Engineering +17

The 1.6-kV AlGaN/GaN HFETs

N. Tipirneni, A. Koudymov, V. Adivarahan et al. · IEEE Electron Device Letters · 2006 · 172 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

G. Simin, A. Koudymov, Ahmad Tarakji et al. · Applied Physics Letters · 2001 · 120 citations

Engineering, Electrical Engineering, Materials Engineering +17

SiO/sub 2//AlGaN/InGaN/GaN MOSDHFETs

G. Simin, A. Koudymov, Jianping Zhang et al. · IEEE Electron Device Letters · 2002 · 112 citations

Engineering, Electrical Engineering, Materials Science +17

7.5 kW/mm ² current switch using AlGaN/GaNmetal-oxide-semiconductor heterostructure field effect transistors on SiC substrates

G. Simin, X. Hu, N. D. Il’inskaya et al. · Electronics Letters · 2000 · 100 citations

Engineering, Electrical Engineering, Materials Science +15