N. D. Il’inskaya

7.5 kW/mm ² current switch using AlGaN/GaNmetal-oxide-semiconductor heterostructure field effect transistors on SiC substrates

G. Simin, X. Hu, N. D. Il’inskaya et al. · Electronics Letters · 2000 · 100 citations

Engineering, Electrical Engineering, Materials Science +15

Mechanism of radio-frequency current collapse in GaN–AlGaN field-effect transistors

Ahmad Tarakji, G. Simin, N. D. Il’inskaya et al. · Applied Physics Letters · 2001 · 91 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging

G. Simin, X. Hu, N. D. Il’inskaya et al. · IEEE Electron Device Letters · 2001 · 85 citations

Engineering, Electrical Engineering, Materials Science +17

Room temperature InAs photodiode–InGaAs LED pairs for methane detection in the mid-IR

B. A. Matveev, M. Aidaraliev, N. V. Zotova et al. · Sensors and Actuators B Chemical · 1998 · 45 citations

Engineering, Electrical Engineering, Electronic Materials +10

Experimental Demonstration of Reduced Light Absorption by Intracavity Metallic Layers in Tamm Plasmon-based Microcavity

M. A. Kaliteevski, N. D. Il’inskaya, Yu. M. Zadiranov et al. · Plasmonics · 2014 · 31 citations

Natural Sciences, Materials Engineering, Materials Science +14