Ahmad Tarakji

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

M. Asif Khan, X. Hu, Ahmad Tarakji et al. · Applied Physics Letters · 2000 · 355 citations

Engineering, Electrical Engineering, Materials Science +17

Health workers and the weaponisation of health care in Syria: a preliminary inquiry for The Lancet –American University of Beirut Commission on Syria

Fouad M. Fouad, Annie Sparrow, Ahmad Tarakji et al. · The Lancet · 2017 · 347 citations

Public Affairs, Health Policy, Health Sciences +9

Si 3 N 4 / AlGaN/GaN –metal–insulator–semiconductor heterostructure field–effect transistors

X. Hu, A. Koudymov, G. Simin et al. · Applied Physics Letters · 2001 · 252 citations

Engineering, Electrical Engineering, Materials Engineering +17

Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

G. Simin, A. Koudymov, Ahmad Tarakji et al. · Applied Physics Letters · 2001 · 120 citations

Engineering, Electrical Engineering, Materials Engineering +17

AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor

G. Simin, X. Hu, Ahmad Tarakji et al. · Japanese Journal of Applied Physics · 2001 · 119 citations

Engineering, Electrical Engineering, Materials Science +17