M. Asif Khan

III–Nitride UV Devices

M. Asif Khan, M. Shatalov, H. P. Maruska et al. · Japanese Journal of Applied Physics · 2005 · 419 citations · Full text

Ultraviolet Light, Photonic Sensor, Optical Materials +18

Nonresonant detection of terahertz radiation in field effect transistors

W. Knap, V. Yu. Kachorovskii, Yanqing Deng et al. · Journal of Applied Physics · 2002 · 386 citations

Semiconductors, Electron Density, Electrical Engineering +13

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

M. Asif Khan, X. Hu, Ahmad Tarakji et al. · Applied Physics Letters · 2000 · 355 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +7

Carrier mobility model for GaN

T. T. Mnatsakanov, M. E. Levinshteĭn, L. I. Pomortseva et al. · Solid-State Electronics · 2003 · 258 citations

Electrical Engineering, Engineering, Applied Physics +3

Si 3 N 4 / AlGaN/GaN –metal–insulator–semiconductor heterostructure field–effect transistors

X. Hu, A. Koudymov, G. Simin et al. · Applied Physics Letters · 2001 · 251 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15