M. Shatalov

III–Nitride UV Devices

M. Asif Khan, M. Shatalov, H. P. Maruska et al. · Japanese Journal of Applied Physics · 2005 · 419 citations · Full text

Ultraviolet Light, Photonic Sensor, Optical Materials +18

Visible light-emitting diodes using <i>a</i>-plane GaN–InGaN multiple quantum wells over <i>r</i>-plane sapphire

A. Chitnis, Changqing Chen, V. Adivarahan et al. · Applied Physics Letters · 2004 · 208 citations

Engineering, Visible Light-emitting Diodes, Optoelectronic Devices +17

250 nm AlGaN light-emitting diodes

V. Adivarahan, Wenhong Sun, A. Chitnis et al. · Applied Physics Letters · 2004 · 195 citations

Wide-bandgap Semiconductor, Electrical Engineering, Optical Materials +9

Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm

Jianping Zhang, A. Chitnis, V. Adivarahan et al. · Applied Physics Letters · 2002 · 169 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +14

Selective area deposited blue GaN–InGaN multiple-quantum well light emitting diodes over silicon substrates

Jun Yang, A. Lunev, G. Simin et al. · Applied Physics Letters · 2000 · 121 citations

Engineering, Silicon Substrates, Optoelectronic Devices +17