Applied Physics Letters · 2004 · 208 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLight-emitting DiodesLuminescent MaterialsQuantum WellsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsBand Tail StatesBlue Light-emitting DiodesGallium Nitride (Gan) MaterialsGallium Nitride Light-emitting DiodesLight-emitting DevicesPhotoluminescence In Quantum WellsQuantum Well Light-emitting DiodesQuantum Well Structures
We report blue-purple pn-junction light-emitting diodes (LEDs) with a-plane GaN–InGaN multiple quantum well active region. The LEDs were grown over r-plane sapphire substrates. Our study has shown the low pump intensity photoluminencence and electroluminescence to be dominated by emission from the band-tail states which then saturates rapidly giving rise to band-edge emission.
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