Feng Wu

Structural characterization of nonpolar (1120) <i>a</i>-plane GaN thin films grown on (1102) <i>r</i>-plane sapphire

Michael D. Craven, Sung‐Hwan Lim, Feng Wu et al. · Applied Physics Letters · 2002 · 486 citations

Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices

Robert M. Farrell, Erin C. Young, Feng Wu et al. · Semiconductor Science and Technology · 2012 · 272 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Optical Materials +19

A GaN bulk crystal with improved structural quality grown by the ammonothermal method

Tadao Hashimoto, Feng Wu, James S. Speck et al. · Nature Materials · 2007 · 262 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +8

Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode

Rajat Sharma, P. Morgan Pattison, Hisashi Masui et al. · Applied Physics Letters · 2005 · 231 citations

Engineering, Semipolar Green Led, Optoelectronic Devices +17

Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates

Troy J. Baker, B. A. Haskell, Feng Wu et al. · Japanese Journal of Applied Physics · 2006 · 198 citations

Materials Science, Semiconductors, Wide-bandgap Semiconductor +15