Shigefusa F. Chichibu

Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

Atsushi Tsukazaki, Akira Ohtomo, Takeyoshi Onuma et al. · Nature Materials · 2004 · 2.1K citations

P-type Doping, Electrical Engineering, Engineering +8

Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

Shigefusa F. Chichibu, T. Azuhata, T. Sota et al. · Applied Physics Letters · 1996 · 1.2K citations

Localized Excitons, Localized Excited State, Engineering +18

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

Shigefusa F. Chichibu, Akira Uedono, Takeyoshi Onuma et al. · Nature Materials · 2006 · 682 citations

Semiconductors, Materials Science, Aluminium Nitride +7

Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures

Shigefusa F. Chichibu, A. Abare, M. S. Minsky et al. · Applied Physics Letters · 1998 · 450 citations

Wide-bandgap Semiconductor, Categoryquantum Electronics, Engineering +21

Luminescences from localized states in InGaN epilayers

Shigefusa F. Chichibu, T. Azuhata, T. Sota et al. · Applied Physics Letters · 1997 · 405 citations

Optical Materials, Engineering, Localized Excited State +17