Akira Uedono

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

Shigefusa F. Chichibu, Akira Uedono, Takeyoshi Onuma et al. · Nature Materials · 2006 · 682 citations

Semiconductors, Materials Science, Aluminium Nitride +7

Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO

Takashi Koida, Shigefusa F. Chichibu, Akira Uedono et al. · Applied Physics Letters · 2003 · 241 citations

Photoluminescence Lifetime, Point Defects, Engineering +16

Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques

Shigefusa F. Chichibu, Akira Uedono, Takeyoshi Onuma et al. · Applied Physics Letters · 2005 · 148 citations

Wide-bandgap Semiconductor, Point Defects, Engineering +17

The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

Shigefusa F. Chichibu, Akira Uedono, Kazunobu Kojima et al. · Journal of Applied Physics · 2018 · 143 citations · Full text

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +12

Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects

Shigefusa F. Chichibu, Takeyoshi Onuma, Masashi Kubota et al. · Journal of Applied Physics · 2006 · 110 citations

Materials Science, Quantum Science, Ii-vi Semiconductor +14