Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

Shigefusa F. Chichibu, Akira Uedono, Takeyoshi Onuma, +15

Nature Materials

SemiconductorsMaterials ScienceAluminium NitrideEngineeringApplied Physics +5

Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO

Takashi Koida, Shigefusa F. Chichibu, Akira Uedono, +5

Applied Physics Letters

Photoluminescence LifetimePoint DefectsEngineeringLuminescence PropertyNonradiative Pl Lifetime +14

Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques

Shigefusa F. Chichibu, Akira Uedono, Takeyoshi Onuma, +5

Applied Physics Letters

Wide-bandgap SemiconductorPoint DefectsEngineeringPositron Annihilation TechniquesOptoelectronic Devices +15

The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

Shigefusa F. Chichibu, Akira Uedono, Kazunobu Kojima, +6

Journal of Applied Physics

Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringPoint DefectsEngineering +10

Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects

Shigefusa F. Chichibu, Takeyoshi Onuma, Masashi Kubota, +5

Journal of Applied Physics

Materials ScienceQuantum ScienceIi-vi SemiconductorExcitonic PhotoluminescencePoint Defects +12

Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy

Shigefusa F. Chichibu, Hideto Miyake, Y. Ishikawa, +5

Journal of Applied Physics

Aluminium NitrideEngineeringOptoelectronic DevicesChemistryLuminescence Property +18

Defects in ZnO thin films grown on ScAlMgO4 substrates probed by a monoenergetic positron beam

Akira Uedono, Takashi Koida, Atsushi Tsukazaki, +3

Journal of Applied Physics

Optical MaterialsEngineeringPositron Annihilation SpectroscopyAnnihilation RadiationZinc Oxide +18

Effect of La doping on the lattice defects and photoluminescence properties of CuO

L. Vimala Devi, T. Selvalakshmi, Akira Uedono, +2

Journal of Alloys and Compounds

Materials SciencePhotoluminescenceEngineeringApplied PhysicsSemiconductor Material +3

Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams

Akira Uedono, Shigefusa F. Chichibu, Zhiyuan Chen, +6

Journal of Applied Physics

Wide-bandgap SemiconductorElectrical EngineeringOptical MaterialsGan Film GrownMonoenergetic Positron Beams +12

Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques

Takeyoshi Onuma, Shigefusa F. Chichibu, Akira Uedono, +8

Journal of Applied Physics

Localized ExcitonsAluminium NitrideOptical MaterialsStrain-free Alxga1−xn FilmsEngineering +16