Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

Shigefusa F. Chichibu, T. Azuhata, T. Sota, +1

Applied Physics Letters

Localized ExcitonsLocalized Excited StateEngineeringExcitation Energy TransferLuminescence Property +16

Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures

Shigefusa F. Chichibu, A. Abare, M. S. Minsky, +8

Applied Physics Letters

Wide-bandgap SemiconductorCategoryquantum ElectronicsEngineeringPiezoelectric FieldWell Thickness +19

Luminescences from localized states in InGaN epilayers

Shigefusa F. Chichibu, T. Azuhata, T. Sota, +1

Applied Physics Letters

Optical MaterialsEngineeringLocalized Excited StateIngan EpilayersImpurity-doped Ingan +15

Polarized Raman spectra in GaN

T. Azuhata, T. Sota, K. Suzuki, +1

Journal of Physics Condensed Matter

Wide-bandgap SemiconductorEpsilon PerpendicularEngineeringHigh QualityPhysics +11

Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO

Takashi Koida, Shigefusa F. Chichibu, Akira Uedono, +5

Applied Physics Letters

Photoluminescence LifetimePoint DefectsEngineeringLuminescence PropertyNonradiative Pl Lifetime +14

Optical properties of InGaN quantum wells

Shigefusa F. Chichibu, A. Abare, M. Mack, +15

Materials Science and Engineering B

PhotonicsQuantum ScienceEngineeringPhysicsApplied Physics +4

Excitonic emissions from hexagonal GaN epitaxial layers

Shigefusa F. Chichibu, T. Azuhata, T. Sota, +1

Journal of Applied Physics

Optical MaterialsEngineeringExcitonic EmissionsLuminescence PropertySemiconductors +14

Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth

Shigefusa F. Chichibu, H. Marchand, M. S. Minsky, +12

Applied Physics Letters

Wide-bandgap SemiconductorPhotonicsPhotoluminescenceEngineeringEmission Mechanisms +9

Quantum-Confined Stark Effect in an AlGaN/GaN/AlGaN Single Quantum Well Structure

Takahiro Deguchi, Kaoru Sekiguchi Kaoru Sekiguchi, Atsushi Nakamura, +4

Japanese Journal of Applied Physics

EngineeringTransmittance SpectrumOptical PropertiesQuantum MaterialsWell Width +15

Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques

Shigefusa F. Chichibu, Akira Uedono, Takeyoshi Onuma, +5

Applied Physics Letters

Wide-bandgap SemiconductorPoint DefectsEngineeringPositron Annihilation TechniquesOptoelectronic Devices +15