Nichia Corporation (Japan)

Institution (Company)

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Also Known As

Nichia Corporation (Japan), Nichia Kagaku Kōgyō Kabushiki-gaisha, 日亜化学工業株式会社

Publications

195.7K

Citations

143

Authors

357

Concepts

About

Nichia Corporation (Japan) is a company institution in Anan, Japan known for engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	92	971	180.7K
2	Natural Sciences	16	40	2.2K
3	Medicine	13	28	1.4K
4	Health Sciences	4	14	298
5	Education	2	3	38

Nichia Corporation (Japan)

Publications

195.7K

Citations

Page 1

	Year	Citations
Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes Shuji Nakamura, Takashi Mukai, Masayuki Senoh Applied Physics Letters White OledElectrical EngineeringElectronic DevicesOptical MaterialsDh Leds	1994	3.7K
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Japanese Journal of Applied Physics PhotonicsElectrical EngineeringEngineeringPhysicsIngan Multi-quantum-well	1996	2.5K
The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes Shuji Nakamura Science	1998	1.8K
High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa, Japanese Journal of Applied Physics High-brightness Ingan BlueEngineeringGreen LedsLuminescence PropertyTypical Green Leds	1995	1.5K
Surface-plasmon-enhanced light emitters based on InGaN quantum wells Koichi Okamoto, Isamu Niki, Alexander Shvartser, Nature Materials PhotonicsPlasmonicsSolid-state LightingEngineeringApplied Physics	2004	1.4K
GaN Growth Using GaN Buffer Layer Shuji Nakamura Shuji Nakamura Japanese Journal of Applied Physics Wide-bandgap SemiconductorGan Film GrownElectrical EngineeringEngineeringHigh-quality Gallium Nitride	1991	1.3K
Spontaneous emission of localized excitons in InGaN single and multiquantum well structures Shigefusa F. Chichibu, T. Azuhata, T. Sota, Applied Physics Letters Localized ExcitonsLocalized Excited StateEngineeringExcitation Energy TransferLuminescence Property	1996	1.2K
Thermal Annealing Effects on P-Type Mg-Doped GaN Films Shuji Nakamura, Takashi Mukai, Masayuki Senoh, Japanese Journal of Applied Physics Materials EngineeringSemiconductorsElectrical EngineeringDl EmissionsEngineering	1992	1.1K
Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa, Japanese Journal of Applied Physics White OledPhotonicsElectrical EngineeringSolid-state LightingEngineering	1995	1.1K
Hole Compensation Mechanism of P-Type GaN Films Shuji Nakamura, Naruhito Iwasa, Masayuki Senoh, Japanese Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1992	1.1K

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