Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes

TLDR

The DH LEDs use a Zn‑doped InGaN layer as the active region. The LEDs achieved a luminous intensity over 1 cd, 1500 µW output power, 2.7 % EQE at 20 mA, 450 nm peak emission with 70 nm FWHM, setting a record for blue LED brightness.

Abstract

Candela-class high-brightness InGaN/AlGaN double-heterostructure (DH) blue-light-emitting diodes (LEDs) with the luminous intensity over 1 cd were fabricated. As an active layer, a Zn-doped InGaN layer was used for the DH LEDs. The typical output power was 1500 μW and the external quantum efficiency was as high as 2.7% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half-maximum of the electroluminescence were 450 and 70 nm, respectively. This value of luminous intensity was the highest ever reported for blue LEDs.