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Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Materials ScienceWide-bandgap SemiconductorElectrical EngineeringOptical MaterialsEngineeringOptical PropertiesApplied PhysicsCrystallographic StructureAluminum Gallium NitrideSapphire SubstrateGan Power DeviceGallium OxideThin FilmsOptoelectronics