Concepedia

Gallium Oxide

Gallium Oxide is a wide-bandgap semiconductor material distinguished by its chemical composition of gallium and oxygen atoms, exhibiting a bandgap exceeding 4 eV that enables high-power and high-temperature electronic device applications.

1.9K

Publications

108.2K

Citations

7.6K

Authors

1.5K

Institutions

Publications per year

2017–2026

817

Variants

Ga2o3

Parents

Publications

1.9K

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

Masataka Higashiwaki, Kohei Sasaki, Akito Kuramata et al. · Applied Physics Letters · 2012 · 1.8K citations

, , +17

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

J. Y. Tsao, Srabanti Chowdhury, M.A. Hollis et al. · Advanced Electronic Materials · 2017 · 1.5K citations · Full text

, , +17

Recent progress in Ga<sub>2</sub>O<sub>3</sub>power devices

Masataka Higashiwaki, Kohei Sasaki, Hisashi Murakami et al. · Semiconductor Science and Technology · 2016 · 1.1K citations

, , +17

A liquid metal reaction environment for the room-temperature synthesis of atomically thin metal oxides

Ali Zavabeti, Jian Zhen Ou, Benjamin J. Carey et al. · Science · 2017 · 845 citations

, , +17

Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

Jae Kyeong Jeong, Hui Yang, Jong Han Jeong et al. · Applied Physics Letters · 2008 · 835 citations

, , +17

1–5 of 1.9K

Authors

7.6K

  1. AK
    Akito Kuramata

    National Institute of Information and Communications Technology, Japan

    21 publications · 5.9K citations

    19

    h-index

  2. KS
    Kohei Sasaki

    National Institute of Information and Communications Technology, Japan

    19 publications · 5.5K citations

    18

    h-index

  3. CR
    C.V. Ramana

    The University of Texas at El Paso, United States

    21 publications · 1.1K citations

    18

    h-index

  4. MH
    Masataka Higashiwaki

    National Institute of Information and Communications Technology, Japan

    19 publications · 7.3K citations

    16

    h-index

  5. JK
    Jae Kyeong Jeong

    Hanyang University, South Korea

    15 publications · 2K citations

    15

    h-index

1–5 of 7.6K

Institutions

1.5K

  1. Chinese Academy of Sciences

    Beijing, China

    31 h-index

    254 publications

    11.9K citations

  2. Centre National de la Recherche Scientifique

    Paris, France

    28 h-index

    189 publications

    9.1K citations

  3. Kyoto University

    Kyoto, Japan

    23 h-index

    87 publications

    7K citations

  4. National Cheng Kung University

    Tainan City, Taiwan

    22 h-index

    95 publications

    3.5K citations

  5. Xidian University

    Xi'an, China

    21 h-index

    224 publications

    12.6K citations

  6. Samsung (South Korea)

    Seoul, South Korea

    21 h-index

    121 publications

    16.1K citations

  7. University of Science and Technology of China

    Hefei, China

    21 h-index

    115 publications

    8.2K citations

  8. National Institute for Materials Science

    Tsukuba, Japan

    21 h-index

    81 publications

    7.1K citations

1–8 of 1.5K

Venues

  1. Applied Physics Letters

    129 publications · 11.5K citations

    54

    h-index

  2. Journal of Applied Physics

    70 publications · 4.4K citations

    32

    h-index

  3. ACS Applied Materials & Interfaces

    53 publications · 2.8K citations

    31

    h-index

  4. IEEE Transactions on Electron Devices

    45 publications · 1.8K citations

    25

    h-index

  5. IEEE Electron Device Letters

    36 publications · 2.2K citations

    24

    h-index

1–5