Hui Yang - Concepedia

Author

Hui Yang

Beijing Jiaotong University ORCID

Also Known As

H. Yang, Hui Won Yang, Hui Yang, Yang, Hui

Publications

Citations

H-Index

Concepts

All Affiliations

Beijing Jiaotong University Samsung (South Korea)

About

Hui Yang is an author at Beijing Jiaotong University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	1.7K
2	Applied Physics	9	9	1.7K
3	Electrical Engineering	8	8	1.6K
4	Natural Sciences	1	1	55
5	Materials Engineering	1	1	235

Hui Yang

Publications

1.9K

Citations

H-Index

Page 1

	Year	Citations
Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors Jae Kyeong Jeong, Hui Yang, Jong Han Jeong, Applied Physics Letters Electrical EngineeringEngineeringNanoelectronicsStress-induced Leakage CurrentSurface Science	2008	827
High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel Jae Kyeong Jeong, Jong Han Jeong, Hui Yang, Applied Physics Letters Materials ScienceSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2007	393
Origin of Subthreshold Swing Improvement in Amorphous Indium Gallium Zinc Oxide Transistors Jong Han Jeong, Hui Yang, Jin‐Seong Park, Electrochemical and Solid-State Letters Materials ScienceMaterials EngineeringElectrical EngineeringReference TransistorsEngineering	2008	235
3.1: <i>Distinguished Paper</i> : 12.1‐Inch WXGA AMOLED Display Driven by Indium‐Gallium‐Zinc Oxide TFTs Array Jae Kyeong Jeong, Jong Han Jeong, Jong Hyun Choi, SID Symposium Digest of Technical Papers	2008	186
12.1‐in. WXGA AMOLED display driven by InGaZnO thin‐film transistors Jae Kyeong Jeong, Jong Han Jeong, Hui Yang, Journal of the Society for Information Display Electrical EngineeringElectronic DevicesA Full‐color 12.1‐In.wxgaElectronic MaterialsDisplay Technology	2009	77
Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions M. Ramsteiner, J. Menniger, O. Brandt, Applied Physics Letters Wide-bandgap SemiconductorNotorious Yellow LuminescenceEngineeringLuminescence PropertyOptical Properties	1996	55
Design and analysis of a novel octopod platform with a reconfigurable trunk Jianxu Wu, Hui Yang, Ruiming Li, Mechanism and Machine Theory Reconfigurable TrunkEngineeringAerospace EngineeringMechanical DesignDesign	2020	44
Annealing atmosphere-dependent electrical characteristics and bias stability of N-doped InZnSnO thin film transistors Jinbao Su, Hui Yang, Yaobin Ma, Materials Science in Semiconductor Processing Electrical EngineeringAtmosphere-dependent Electrical CharacteristicsEngineeringApplied PhysicsSemiconductor Material	2020	30
Annealing temperature effects on the structural and electrical properties of N-doped In-Zn-Sn-O thin film transistors Jinbao Su, Li Ran, Yaobin Ma, Journal of Alloys and Compounds Materials ScienceElectrical EngineeringEngineeringOxide ElectronicsApplied Physics	2019	20
A novel Bulk-FinFET with dual-material gate Hong Yang, Yufeng Guo, Hui Yang, Device ModelingElectrical EngineeringEngineeringDmg StructureAdvanced Packaging (Semiconductors)	2014	19

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