Electrochemical and Solid-State Letters · 2008 · 237 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesThin FilmsAmorphous SemiconductorsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor Thin FilmsThin-film MaterialsThin-film TransistorsAmorphous Indium Gallium Zinc OxideAmorphous Semiconductor FilmsAmorphous Thin FilmsDensificationGallium OxideOxide Thin-film TransistorsSemiconductor Oxide Thin FilmsSubthreshold Swing
The effect of the channel deposition pressure on the device performance of amorphous indium-gallium-zinc oxide (a-IGZO) transistors was investigated in detail. The performance of the fabricated transistors improved monotonously with decreasing chamber pressure: at a pressure of 1 mTorr, the field-effect mobility and subthreshold gate swing of the a-IGZO thin-film transistors were dramatically improved to and 0.17 V/decade, respectively, compared to those ( and 0.87 V/decade) of the reference transistors prepared at 5 mTorr. This enhancement in the subthreshold characteristics was attributed to the reduction of the bulk defects of the a-IGZO channel, which might result from the greater densification of the a-IGZO films at the lower deposition pressure.
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