Yeon‐Gon Mo

Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

Jae Kyeong Jeong, Hui Yang, Jong Han Jeong et al. · Applied Physics Letters · 2008 · 827 citations

Electrical Engineering, Engineering, Nanoelectronics +11

Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water

Jin‐Seong Park, Jae Kyeong Jeong, Hyun‐Joong Chung et al. · Applied Physics Letters · 2008 · 509 citations

Engineering, Water Exposure, Semiconductors +17

High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

Min Kyu Kim, Jong Han Jeong, Hun Jung Lee et al. · Applied Physics Letters · 2007 · 455 citations

Electrical Engineering, Thin Film Transistors, Engineering +10

High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel

Jae Kyeong Jeong, Jong Han Jeong, Hui Yang et al. · Applied Physics Letters · 2007 · 393 citations

Materials Science, Semiconductor Technology, Electrical Engineering +13

Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment

Jin‐Seong Park, Jae Kyeong Jeong, Yeon‐Gon Mo et al. · Applied Physics Letters · 2007 · 364 citations

Materials Science, Electrical Engineering, Electronic Devices +13