Recent progress in Ga₂O₃power devices

TLDR

Ga₂O₃ offers exceptional material properties for power devices and can be produced as large, high‑quality wafers via melt‑growth, making it a promising wide‑bandgap semiconductor after SiC and GaN. This review surveys the current status and future prospects of research and development in Ga₂O₃ power devices. It examines recent advances in fundamental technologies, including bulk wafer production, homoepitaxial thin‑film growth by MBE and HVPE, and the processing and characterization of MOSFETs, metal‑oxide‑semiconductor FETs, and Schottky barrier diodes.

Abstract

This is a review article on the current status and future prospects of the research and development on gallium oxide (Ga2O3) power devices. Ga2O3 possesses excellent material properties, in particular for power device applications. It is also attractive from an industrial viewpoint since large-size, high-quality wafers can be manufactured from a single-crystal bulk synthesized by melt–growth methods. These two features have drawn much attention to Ga2O3 as a new wide bandgap semiconductor following SiC and GaN. In this review, we describe the recent progress in the research and development on fundamental technologies of Ga2O3 devices, covering single-crystal bulk and wafer production, homoepitaxial thin film growth by molecular beam epitaxy and halide vapor phase epitaxy, as well as device processing and characterization of metal–semiconductor field-effect transistors, metal–oxide–semiconductor field-effect transistors and Schottky barrier diodes.