Akinori Koukitu - Concepedia

Author

Akinori Koukitu

Tokyo University of Agriculture and Technology

Also Known As

A. Koukitu, Akinori KOUKITU, Akinori Koukitu, Akinori Koukitu Akinori Koukitu, Akinori koukitu

328

Publications

7.5K

Citations

H-Index

Concepts

All Affiliations

Tokyo University of Agriculture and Technology Tokuyama (Japan)Sumitomo Electric Industries (Japan)Shibuya (Japan)National Institute of Information and Communications Technology

About

Akinori Koukitu is an author at Tokyo University of Agriculture and Technology specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	39	129	6.5K
2	Applied Physics	38	123	6.3K
3	Chemical Engineering	12	13	357
4	Natural Sciences	8	8	224
5	Health Sciences	1	1	70

Akinori Koukitu

134

Publications

6.9K

Citations

H-Index

Page 1

	Year	Citations
Recent progress in Ga<sub>2</sub>O<sub>3</sub>power devices Masataka Higashiwaki, Kohei Sasaki, Hisashi Murakami, Semiconductor Science and Technology Materials ScienceSemiconductorsElectrical EngineeringReview ArticleEngineering	2016	1.1K
Homoepitaxial growth of β-Ga<sub>2</sub>O<sub>3</sub>layers by halide vapor phase epitaxy Hisashi Murakami, Kazushiro Nomura, Ken Goto, Applied Physics Express Oxide HeterostructuresMaterials ScienceEngineeringCrystal Growth TechnologySurface Science	2014	384
Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on <i>n</i>––Ga2O3 drift layers grown by halide vapor phase epitaxy Masataka Higashiwaki, Keita Konishi, Kohei Sasaki, Applied Physics Letters	2016	336
Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate Kensaku Motoki, Takuji Okahisa, Naoki Matsumoto, Japanese Journal of Applied Physics Materials ScienceWide-bandgap SemiconductorElectrical EngineeringThick Gan LayerGan Substrate	2001	311
Growth and characterization of freestanding GaN substrates Kensaku Motoki, Takuji Okahisa, Seiji Nakahata, Journal of Crystal Growth Electrical EngineeringGan SubstratesEngineeringApplied PhysicsAluminum Gallium Nitride	2002	188
On the origin of the 265 nm absorption band in AlN bulk crystals Ramón Collazo, Jinqiao Xie, Benjamin E. Gaddy, Applied Physics Letters Aluminium NitrideOptical MaterialsEngineeringCrystal Growth TechnologyChemistry	2012	158
Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport Yoshinao Kumagai, Yuki Kubota, Toru Nagashima, Applied Physics Express Materials ScienceMaterials EngineeringAluminium NitrideOptical MaterialsEngineering	2012	133
Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy Toru Kinoshita, Toshiyuki Obata, Toru Nagashima, Applied Physics Express Aluminium NitrideWhite OledElectrical EngineeringDislocation DensityEngineering	2013	130
Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy Toru Kinoshita, Keiichiro Hironaka, Toshiyuki Obata, Applied Physics Express Aluminium NitrideOptical MaterialsEngineeringOptical PropertiesNanoelectronics	2012	129
Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxy Kazushiro Nomura, Ken Goto, Rie Togashi, Journal of Crystal Growth Materials ScienceMaterials Engineeringβ-Ga2o3 GrowthEngineeringCrystal Growth Technology	2014	121

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