Takuji Okahisa

Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate

Kensaku Motoki, Takuji Okahisa, Naoki Matsumoto et al. · Japanese Journal of Applied Physics · 2001 · 311 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +13

Growth and characterization of freestanding GaN substrates

Kensaku Motoki, Takuji Okahisa, Seiji Nakahata et al. · Journal of Crystal Growth · 2002 · 188 citations

Electrical Engineering, Gan Substrates, Engineering +4

Dislocation reduction in GaN crystal by advanced-DEEP

Kensaku Motoki, Takuji Okahisa, Ryu Hirota et al. · Journal of Crystal Growth · 2007 · 121 citations

Dislocation Reduction, Applied Physics, Categoryiii-v Semiconductor +1

Optical properties near the band gap on hexagonal and cubic GaN

Hajime Okumura, S. Yoshida, Takuji Okahisa · Applied Physics Letters · 1994 · 87 citations

Materials Science, Hexagonal Gan, Electrical Engineering +15

Epitaxial growth of cubic and hexagonal GaN by gas source molecular beam epitaxy using a microwave plasma nitrogen source

Hajime Okumura, S. Misawa, Takuji Okahisa et al. · Journal of Crystal Growth · 1994 · 56 citations

Materials Science, Hexagonal Gan, Wide-bandgap Semiconductor +5