S. Misawa

Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN-coated sapphire substrates

S. Yoshida, S. Misawa, S. Gonda · Applied Physics Letters · 1983 · 350 citations

Aluminium Nitride, Engineering, Crystal Qualities +16

Properties of Al<i>x</i>Ga1−<i>x</i>N films prepared by reactive molecular beam epitaxy

S. Yoshida, S. Misawa, S. Gonda · Journal of Applied Physics · 1982 · 272 citations

Optical properties of AlN epitaxial thin films in the vacuum ultraviolet region

Hayato Yamashita, K. Fukui, S. Misawa et al. · Journal of Applied Physics · 1979 · 234 citations

Aluminium Nitride, Optical Materials, Engineering +16

Epitaxial growth of cubic and hexagonal GaN on GaAs by gas-source molecular-beam epitaxy

Hajime Okumura, S. Misawa, S. Yoshida · Applied Physics Letters · 1991 · 223 citations

Wide-bandgap Semiconductor, Engineering, Semiconductors +16

Reactive molecular beam epitaxy of aluminium nitride

S. Yoshida, S. Misawa, Youhei Fujii et al. · Journal of Vacuum Science and Technology · 1979 · 197 citations

Materials Science, Aluminium Nitride, Optical Materials +12