S. Misawa - Concepedia

Author

S. Misawa

Electrotechnical Institute

Also Known As

Misawa, S., S Misawa, S. MISAWA, S. Misawa, Shunji MISAWA, Shunji Misawa, Shunji Misawa Shunji Misawa

134

Publications

4.4K

Citations

H-Index

Concepts

All Affiliations

Electrotechnical Institute Waseda University

About

S. Misawa is an author at Electrotechnical Institute specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	32	61	3.9K
2	Applied Physics	32	61	3.9K
3	Chemistry	3	3	64
4	Chemical Engineering	2	2	175
5	Natural Sciences	1	1	88

S. Misawa

Publications

4.2K

Citations

H-Index

Page 1

	Year	Citations
Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN-coated sapphire substrates S. Yoshida, S. Misawa, S. Gonda Applied Physics Letters Aluminium NitrideEngineeringCrystal QualitiesAln-coated Sapphire SubstratesGan Films	1983	350
Properties of Al<i>x</i>Ga1−<i>x</i>N films prepared by reactive molecular beam epitaxy S. Yoshida, S. Misawa, S. Gonda Journal of Applied Physics	1982	272
Optical properties of AlN epitaxial thin films in the vacuum ultraviolet region Hayato Yamashita, K. Fukui, S. Misawa, Journal of Applied Physics Aluminium NitrideOptical MaterialsEngineeringOptical AbsorptionVacuum Ultraviolet Region	1979	234
Epitaxial growth of cubic and hexagonal GaN on GaAs by gas-source molecular-beam epitaxy Hajime Okumura, S. Misawa, S. Yoshida Applied Physics Letters Wide-bandgap SemiconductorEngineeringSemiconductorsNanoelectronicsCubic Gan	1991	223
Reactive molecular beam epitaxy of aluminium nitride S. Yoshida, S. Misawa, Youhei Fujii, Journal of Vacuum Science and Technology Materials ScienceAluminium NitrideOptical MaterialsSurface Acoustic WavesEngineering	1979	197
Preparation and structure of carbon film deposited by a mass-separated C+ ion beam Takeo Miyazawa, S. Misawa, Sadafumi Yoshida, Journal of Applied Physics Materials ScienceDiamond-like CarbonChemical EngineeringOptical MaterialsEngineering	1984	159
Intrinsic Defects in Cubic Silicon Carbide H. Itoh, A. Kawasuso, Takeshi Ohshima, physica status solidi (a) Materials EngineeringElectrical EngineeringPoint DefectsEngineeringPhysics	1997	148
Temperature dependence of electrical properties of <i>n</i>- and <i>p</i>-type 3C-SiC M. Yamanaka, Hiroshi Daimon, E. Sakuma, Journal of Applied Physics EngineeringTemperature DependenceAcoustic PhononSemiconductor DeviceSemiconductors	1987	141
High-temperature electrical properties of 3C-SiC epitaxial layers grown by chemical vapor deposition Katsuhiro Sasaki, E. Sakuma, S. Misawa, Applied Physics Letters EngineeringLarger Mobilities3C-sic Epitaxial Layers3C-sic LayersSemiconductor Device	1984	125
High-quality superconducting thin films of Bi2Sr2Ca2Cu3Ox grown in situ by metalorganic CVD Kazuhiko Endo, H. Yamasaki, S. Misawa, Nature Materials ScienceSuperconducting MaterialHigh-tc SuperconductivityEngineeringBi2sr2ca2cu3ox Grown	1992	125

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