Publication | Closed Access
Optical properties of AlN epitaxial thin films in the vacuum ultraviolet region
234
Citations
12
References
1979
Year
Aluminium NitrideOptical MaterialsEngineeringOptical AbsorptionVacuum Ultraviolet RegionSpectroscopic PropertyIntense BandOptical PropertiesMolecular Beam EpitaxyEpitaxial GrowthMaterials SciencePhotoluminescencePhysicsOptoelectronic MaterialsApplied PhysicsCondensed Matter PhysicsLight AbsorptionThin FilmsAln Thin Films
Optical absorption of AlN thin films shows a ’’knee’’ structure at 6.2 eV and an intense band at 7.8 eV. The structure at 6.2 eV is interpreted as excitonic absorptions due to transitions across the direct energy gap of about 6.2 eV. Dichroism observed at the absorption edge indicates that the transition Γ1v–Γ1c (E∥c) is of lower energy than the transition Γ6v–Γ1c (E⊥c). Strong dichroism in the 7–8-eV region is thought to cause the birefringence of AlN.
| Year | Citations | |
|---|---|---|
Page 1
Page 1