Journal of Applied Physics · 1979 · 238 citations · 12 references
Natural SciencesMaterials SciencePhysicsMaterials PhysicsOptical MaterialsThin FilmsElectronic Band StructureOptical Properties Of MaterialsOptical Properties Of SolidsOptical Thin FilmsThin Film Optical PropertiesThin-film MaterialsBand Gap EnergyDichroismEnergy Band GapEpitaxial Thin FilmsExcitonic EffectsOptical Absorption SpectraOptical CharacterizationOptical Properties
Optical absorption of AlN thin films shows a ’’knee’’ structure at 6.2 eV and an intense band at 7.8 eV. The structure at 6.2 eV is interpreted as excitonic absorptions due to transitions across the direct energy gap of about 6.2 eV. Dichroism observed at the absorption edge indicates that the transition Γ1v–Γ1c (E∥c) is of lower energy than the transition Γ6v–Γ1c (E⊥c). Strong dichroism in the 7–8-eV region is thought to cause the birefringence of AlN.
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Epitaxially grown AlN and its optical band gap
Woosoon Yim, E. J. Stofko, P. J. Zanzucchi et al. · Journal of Applied Physics · 1973 · 600 citations
Natural Sciences, Materials Engineering, Materials Science +17
Refraction Index Measurements on AlN Single Crystals
J. Pastrňák, L. Roskovcová · physica status solidi (b) · 1966 · 163 citations
Band structures of GaN and AIN
S. Bloom · Journal of Physics and Chemistry of Solids · 1971 · 89 citations