S. Yoshida - Concepedia

Author

S. Yoshida

Saitama University

Also Known As

S Yoshida, S. YOSHIDA, S. Yoshida, Satoshi Yoshida, Syouji YOSHIDA

165

Publications

5.9K

Citations

H-Index

Concepts

All Affiliations

Saitama University The University of Tokyo Shibaura Institute of Technology Tokyo University of Science Japan Science and Technology Agency

About

S. Yoshida is an author at Saitama University specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	36	83	4.8K
2	Applied Physics	36	84	5K
3	Electrical Engineering	18	22	1.7K
4	Natural Sciences	4	4	193
5	Chemistry	3	3	97

S. Yoshida

Publications

5.3K

Citations

H-Index

Page 1

	Year	Citations
Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN-coated sapphire substrates S. Yoshida, S. Misawa, S. Gonda Applied Physics Letters Aluminium NitrideEngineeringCrystal QualitiesAln-coated Sapphire SubstratesGan Films	1983	350
Optical effect of the substrate on the anomalous absorption of aggregated silver films Tetsuo Yamaguchi, S. Yoshida, Akira KINBARA Thin Solid Films Materials SciencePlasmonicsOptical MaterialsEngineeringNanotechnology	1974	348
Properties of Al<i>x</i>Ga1−<i>x</i>N films prepared by reactive molecular beam epitaxy S. Yoshida, S. Misawa, S. Gonda Journal of Applied Physics	1982	272
Optical properties of AlN epitaxial thin films in the vacuum ultraviolet region Hayato Yamashita, K. Fukui, S. Misawa, Journal of Applied Physics Aluminium NitrideOptical MaterialsEngineeringOptical AbsorptionVacuum Ultraviolet Region	1979	234
Epitaxial growth of cubic and hexagonal GaN on GaAs by gas-source molecular-beam epitaxy Hajime Okumura, S. Misawa, S. Yoshida Applied Physics Letters Wide-bandgap SemiconductorEngineeringSemiconductorsNanoelectronicsCubic Gan	1991	223
Reactive molecular beam epitaxy of aluminium nitride S. Yoshida, S. Misawa, Youhei Fujii, Journal of Vacuum Science and Technology Materials ScienceAluminium NitrideOptical MaterialsSurface Acoustic WavesEngineering	1979	197
Growth and characterization of cubic GaN Hajime Okumura, Katsumi Ohta, G. Feuillet, Journal of Crystal Growth Categoryiii-v SemiconductorApplied PhysicsGan Power DeviceCubic Gan	1997	182
Intrinsic Defects in Cubic Silicon Carbide H. Itoh, A. Kawasuso, Takeshi Ohshima, physica status solidi (a) Materials EngineeringElectrical EngineeringPoint DefectsEngineeringPhysics	1997	148
Temperature dependence of electrical properties of <i>n</i>- and <i>p</i>-type 3C-SiC M. Yamanaka, Hiroshi Daimon, E. Sakuma, Journal of Applied Physics EngineeringTemperature DependenceAcoustic PhononSemiconductor DeviceSemiconductors	1987	141
High-temperature electrical properties of 3C-SiC epitaxial layers grown by chemical vapor deposition Katsuhiro Sasaki, E. Sakuma, S. Misawa, Applied Physics Letters EngineeringLarger Mobilities3C-sic Epitaxial Layers3C-sic LayersSemiconductor Device	1984	125

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