S. Yoshida

Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN-coated sapphire substrates

S. Yoshida, S. Misawa, S. Gonda · Applied Physics Letters · 1983 · 350 citations

Engineering, Materials Engineering, Materials Science +16

Optical effect of the substrate on the anomalous absorption of aggregated silver films

Tetsuo Yamaguchi, S. Yoshida, Akira KINBARA · Thin Solid Films · 1974 · 348 citations

Natural Sciences, Materials Science, Physics +11

Properties of Al<i>x</i>Ga1−<i>x</i>N films prepared by reactive molecular beam epitaxy

S. Yoshida, S. Misawa, S. Gonda · Journal of Applied Physics · 1982 · 272 citations

Natural Sciences, Materials Engineering, Materials Science +16

Optical properties of AlN epitaxial thin films in the vacuum ultraviolet region

Hayato Yamashita, K. Fukui, S. Misawa et al. · Journal of Applied Physics · 1979 · 238 citations

Natural Sciences, Materials Science, Physics +17

Epitaxial growth of cubic and hexagonal GaN on GaAs by gas-source molecular-beam epitaxy

Hajime Okumura, S. Misawa, S. Yoshida · Applied Physics Letters · 1991 · 226 citations

Engineering, Materials Engineering, Materials Science +17