Reactive molecular beam epitaxy of aluminium nitride

Abstract

Single-crystal films of AlN have been fabricated on sapphire and silicon substrates by reactive molecular beam epitaxy (MBE) at 1000°–1200°C. The crystal quality of the films was examined by the reflection high-energy electron diffraction technique and the measurement of cathodoluminescence. The results suggest that the epitaxial AlN films prepared by reactive MBE have good quality as compared with bulk single crystal. Nonlinear optical coefficients and the electromechanical coupling constant of surface acoustic waves were also measured. It was shown that the AlN films have unique characteristics and are promising for nonlinear optical and surface acoustic wave devices.