Seiji Nakahata

Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate

Kensaku Motoki, Takuji Okahisa, Naoki Matsumoto et al. · Japanese Journal of Applied Physics · 2001 · 311 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +13

Growth and characterization of freestanding GaN substrates

Kensaku Motoki, Takuji Okahisa, Seiji Nakahata et al. · Journal of Crystal Growth · 2002 · 188 citations

Electrical Engineering, Gan Substrates, Engineering +4

Dislocation reduction in GaN crystal by advanced-DEEP

Kensaku Motoki, Takuji Okahisa, Ryu Hirota et al. · Journal of Crystal Growth · 2007 · 121 citations

Dislocation Reduction, Applied Physics, Categoryiii-v Semiconductor +1

Morphology and X-Ray Diffraction Peak Widths of Aluminum Nitride Single Crystals Prepared by the Sublimation Method

Motoyuki Tanaka, Seiji Nakahata, Kouichi Sogabe et al. · Japanese Journal of Applied Physics · 1997 · 114 citations

Aluminium Nitride, Single Crystals, Optical Materials +16

Preparation of large GaN substrates

Kensaku Motoki, Takuji Okahisa, Seiji Nakahata et al. · Materials Science and Engineering B · 2002 · 37 citations

Electrical Engineering, Engineering, Applied Physics +5